PART |
Description |
Maker |
2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
Unknow
|
2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
List of Unclassifed Manufacturers ETC[ETC]
|
2SD371 |
SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
List of Unclassifed Manufacturers
|
TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
P0430WQLC-T |
Tentative Product Specification
|
AZ Displays
|
G121X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays
|
2SC5363TENTATIVE |
2SC5363(Tentative) - NPN Transistor
|
Matsshita / Panasonic
|
TAN-325 |
Tentative Data Audio IC Application Circuit Example of 3-V FM Radio Circuit TA2159F
|
TOSHIBA
|
THNCFXXXMBA THNCF008MBA THNCF008MBAI THNCF016MBA T |
TENTATIVE - SMALL FORM FACTOR CARD The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.
|
TOSHIBA[Toshiba Semiconductor]
|
SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE 1160 A, 3400 V, SILICON, RECTIFIER DIODE 1010 A, 3600 V, SILICON, RECTIFIER DIODE 1106 A, 3800 V, SILICON, RECTIFIER DIODE 2640 A, 3800 V, SILICON, RECTIFIER DIODE 1106 A, 3400 V, SILICON, RECTIFIER DIODE 435 A, 1500 V, SILICON, RECTIFIER DIODE 440 A, 600 V, SILICON, RECTIFIER DIODE 1160 A, 3800 V, SILICON, RECTIFIER DIODE 1160 A, 4200 V, SILICON, RECTIFIER DIODE 940 A, 800 V, SILICON, RECTIFIER DIODE 940 A, 1800 V, SILICON, RECTIFIER DIODE 940 A, 400 V, SILICON, RECTIFIER DIODE 940 A, 1000 V, SILICON, RECTIFIER DIODE 940 A, 600 V, SILICON, RECTIFIER DIODE 940 A, 1600 V, SILICON, RECTIFIER DIODE 1106 A, 4000 V, SILICON, RECTIFIER DIODE 310 A, 2600 V, SILICON, RECTIFIER DIODE 370 A, 2600 V, SILICON, RECTIFIER DIODE 2700 A, 2600 V, SILICON, RECTIFIER DIODE 860 A, 1400 V, SILICON, RECTIFIER DIODE 440 A, 400 V, SILICON, RECTIFIER DIODE 440 A, 800 V, SILICON, RECTIFIER DIODE 435 A, 1600 V, SILICON, RECTIFIER DIODE 435 A, 1800 V, SILICON, RECTIFIER DIODE 527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns. 3-in-1 silicon delay line. Output delay 30ns. 3-in-1 silicon delay line. Output delay 90ns. 3-in-1 silicon delay line. Output delay 12ns. 3-in-1 silicon delay line. Output delay 25ns. Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No 3-in-1 silicon delay line. Output delay 70ns. 3-in-1 silicon delay line. Output delay 75ns. 3-in-1 silicon delay line. Output delay 50ns. 3-in-1 silicon delay line. Output delay 20ns. 3-in-1 silicon delay line. Output delay 80ns. 3-in-1 silicon delay line. Output delay 15ns.
|
Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm MAXIM - Dallas Semiconductor
|
IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE 16 A, 800 V, SILICON, RECTIFIER DIODE 16 A, 400 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 1000 V, SILICON, RECTIFIER DIODE 16 A, 1200 V, SILICON, RECTIFIER DIODE 16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
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